DMS3017SSD-13【PDF 6/10 页】MOSFET 2N-CH 30V 8A/6A SO8

您好，
买卖IC网欢迎您。
请登录
免费注册

2页 3页 4页 5页 [6页]7页 8页 9页 10页

DMS3017SSD

Electrical Characteristics – Q2 @ T A = 25°C unless otherwise stated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV DSS

I DSS

I GSS

30

-

-

-

-

-

-

1

±100

V

μ A

nA

V GS = 0V, I D = 1mA

V DS = 30V, V GS = 0V

V GS = ±20V, V DS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V GS(th)

R DS (ON)

|Y fs |

V SD

1.0

-

-

-

-

15

25

2.5

0.7

2.4

22

32

-

1

V

m Ω

S

V

V DS = V GS , I D = 250 μ A

V GS = 10V, I D = 8.8A

V GS = 4.5V, I D = 7A

V DS = 5V, I D = 8.8A

V GS = 0V, I S = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (V GS = 4.5V)

Total Gate Charge (V GS = 10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

C iss

C oss

C rss

R g

Q g

Q g

Q gs

Q gd

t D(on)

t r

t D(off)

t f

-

-

-

-

-

-

-

-

-

-

-

-

478.9

96.7

61.4

1.1

5.0

10.5

1.8

1.6

2.9

7.9

14.6

3.1

-

-

-

-

-

-

-

-

-

-

-

-

pF

Ω

nC

ns

V DS = 15V, V GS = 0V,

f = 1.0MHz

V DS = 0V, V GS = 0V, f = 1MHz

V DS = 15V, V GS = 4.5V, I D = 10A

V DS = 15V, V GS = 10V, I D = 10A

V GS = 10V, V DS = 15V,

R G = 3 ? , R L = 1.5 ?

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

30

V GS = 10V

20

25

V GS = 4.5V

15

V DS = 5V

20

V GS = 4.0V

15

V GS = 3.5V

10

V GS = 150°C

10

5

V GS = 125°C

V GS = 85°C

5

0

V GS = 2.5V

V GS = 3.0V

0

V GS = 25°C

V GS = -55°C

0

0.5

1

1.5 2 2.5 3 3.5 4 4.5

5

0

0.5 1 1.5 2 2.5 3 3.5

4

V DS , DRAIN-SOURCE VOLTAGE (V)

Fig. 12 Typical Output Characteristic

V GS , GATE-SOURCE VOLTAGE (V)

Fig. 13 Typical Transfer Characteristic

DMS3017SSD

Document number: DS35052 Rev. 2 - 2

6 of 10

www.diodes.com

October 2010

? Diodes Incorporated

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

DMS3019SSD-13 MOSFET 2N-CH 30V 7A/5.7A SO8

DNT2400DK DEVELOPMENT KIT FOR DNT2400 MOD

DNT24DK RF EVAL FOR DNT24P

DNT900DK DEVELOPMENT KIT FOR DNT900 MOD

DNW1-DW10/12.5MM/BLA LAMP T-1.25 NEO WEDGE 14V 100MA

DNW1-DW48/GRA LAMP T-1.25 NEO WEDGE 14V

DNW1-EW87/GRA LAMP T-1.25 NEO WEDGE 14V

DP1203C4333LF MODULE DROPIN FOR XE1203F 433MHZ

相关代理商/技术参数

DMS-30193 制造商:未知厂家制造商全称:未知厂家功能描述:Alternate Source for DP-650 Series, 3 Digit, LCD Display Digital Panel Voltmeters

DMS-30194 制造商:未知厂家制造商全称:未知厂家功能描述:Alternate Source for DP-650 Series, 3 Digit, LCD Display Digital Panel Voltmeters

DMS-30194-C 功能描述:数字面板表 +/-2V input +5Vdc 3 1/2 digit LCD RoHS:否制造商:Murata Power Solutions 设备类型:AC Voltmeters 显示器类型:LED, 3 Digit, Red 工作电源电压:85 VAC to 264 VAC 工作电源电流:50 mArms 输入电流:50 mA 输入频率: 输入电压:120 VAC 系列:DMS-20PC-1-LM

DMS-30195 制造商:未知厂家制造商全称:未知厂家功能描述:Alternate Source for DP-650 Series, 3 Digit, LCD Display Digital Panel Voltmeters

DMS3019SSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMS3019SSD-13 功能描述:MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 12V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

DMS-3019X 制造商:未知厂家制造商全称:未知厂家功能描述:Alternate Source for DP-650 Series, 3 Digit, LCD Display Digital Panel Voltmeters

DMS305 制造商:Denon Electronics 功能描述:MICROPHONEDENON 3210037103